CRYSTALLIZATION PROCESS ON AMORPHOUS MG-GA-SN SYSTEM

摘要

The crystallization processes on Mg81.09Ga18.91 and Mg80.50Ga17.76Sn1.67 amorphous samples were studied by means of X-ray diffraction and electrical resistivity isothermal measurements. A small amount of Sn added to the binary eutectic was found to modify the crystallization products and the evolution time. Crystallization activation energies were estimated. [References: 14]