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Microstructure and mechanical properties of reaction-formed joints in reaction-bonded silicon carbide ceramics

机译:反应结合碳化硅陶瓷中反应形成接头的组织和力学性能

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摘要

A reaction-bonded silicon carbide (RB-SiC) ceramic material (Carborundum's Cerastar RB-SiC) has been joined using a reaction forming approach. Microstructure and mechanical properties of three types of reaction-formed joints (350 mu m, 50-55 mu m, and 20-25 mu m thick) have been evaluated. Thick (similar to 350 mu m) joints consist mainly of silicon with a small amount of silicon carbide. The flexural strength of thick joints is about 44 +/- 2 MPa, and fracture always occurs at the joints. The microscopic examination of fracture surfaces of specimens with thick joints tested at room temperature revealed the failure mode to be typically brittle. Thin joints (<50-55 mu m) consist of silicon carbide and silicon phases. The room and high temperature flexural strengths of thin (<50-55 mu m) reaction-formed joints have been found to be at least equal to that of the bulk Cerastar RB-SiC materials because the flexure bars fracture away from the joint regions. in this case, the fracture origins appear to be inhomogeneities inside the parent material. This was always found to be the case for thin joints tested at temperatures up to 1350 degrees C in air. This observation suggests that the strength of Cerastar RB-SiC material containing a thin joint is not limited by the joint strength but by the strength of the bulk (parent) materials. (C) 1998 Kluwer Academic Publishers. [References: 20]
机译:使用反应形成方法将反应结合的碳化硅(RB-SiC)陶瓷材料(金刚砂的Cerastar RB-SiC)结合在一起。评估了三种类型的反应形成的接头(350微米,50-55微米和20-25微米厚)的微观结构和力学性能。厚(约350微米)接头主要由硅和少量碳化硅组成。厚接头的抗弯强度约为44 +/- 2 MPa,并且断裂总是在接头处发生。在室温下对带有厚接缝的试样的断裂表面进行显微镜检查,发现其破坏模式通常很脆。细缝(<50-55μm)由碳化硅和硅相组成。已经发现,薄的(<50-55μm)反应形成的接头的室温和高温抗弯强度至少等于块状Cerastar RB-SiC材料的抗弯强度,因为挠性条会从接头区域破裂。在这种情况下,断裂起源似乎是母体材料内部的不均匀性。对于在空气中高达1350摄氏度的温度下进行测试的薄接头,情况总是如此。该观察结果表明,包含薄的接缝的Cerastar RB-SiC材料的强度不受接缝强度的限制,而受块状(母体)材料的强度的限制。 (C)1998 Kluwer学术出版社。 [参考:20]

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