Post-densification behavior of reaction-bonded silicon nitride (RBSN): Effect of various characteristics of RBSN

摘要

The effects of the various characteristics of reaction-bonded silicon nitride (RBSN), such as crystalline secondary phases, residual Si, pore size distribution, and agglomerates developed during nitridation on the post-densification behavior, were investigated in detail. A model experiment was carried out to study the effect of crystalline secondary phases in RBSN on the post-densification. The result clearly indicates that the pre-formation of crystalline secondary phases does not influence the sintering of Si3N4-powder compacts, which is further demonstrated in the post-densification of RBSN, because the formation of a liquid, including its composition and properties, is dependent on the composition of the system and sintering temperature, but independent of the presence of crystalline secondary phases. In particular, the complete melt of crystalline secondary phases is not related to their melting points and only relies on the composition of the system. The residual Si and pore size distribution in RBSN show no significant effect on the post-densification. Some large pores of similar to5 mum in size could be eliminated by liquid filling and grain growth during post-sintering. The residual Si in RBSN could change into beta-Si3N4 by nitridation of liquid Si and contribute to the weight gain during the early stage of post-sintering. However, it is shown that the agglomerates in RBSN play an important role in the post-densification. The effect of agglomerates on the post-densification strongly depends on their size and amounts in RBSN. Nearly complete densification of RBSN could be reached through lowering of the nitriding temperature or adding Si3N4 powder to green bodies, which leads to the formation of more uniform microstructure during nitridation. A mechanism that explains how the agglomerates affect the post-densification of RBSN was discussed based on the theories of liquid phase sintering. (C) 2004 Kluwer Academic Publishers.