Total Ionising Dose effects in the FE-I4 front-end chip of the ATLAS Pixel IBL detector

摘要

The ATLAS Pixel Insertable B-Layer (IBL) detector was installed into the ATLAS experiment in 2014 and has been in operation since 2015. During the first year of data taking, an increase of the low-voltage current of the FE-I4 chip was measured. This increase was traced back to radiation damage in the chip. The dependence of the current from the Total Ionising Dose (TID) and temperature has been tested with X-ray irradiations. This paper presents the measurement results and gives a parameterisation of the leakage current and detector operation guidelines.