Application of Single-Wafer Wet Cleaning Prior to Epitaxial SiGe Process

摘要

Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [1,2], As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [3, 4].