Chemical Diffusion in TiO_2

摘要

Chemical diffusion in TiO_(2-x) within n-p transition regime has been studied. In this regime several point defects such as oxygen vacancies, V_o~(..), titanium interstitials, Ti_i~(...) and Ti+i~(....), electrons, e', and electron holes h~. are present with comparable concentrations. Based on defect structure in TiO_(2-x) the relationship between chemical diffusion coefficient and self-diffusion coefficients of both titanium and oxygen were deduced.