首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum >Structural and Electron-Hopping Studies of Pr- and Nd-Substituted La2/3Ba1/3MnO3 Manganites
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Structural and Electron-Hopping Studies of Pr- and Nd-Substituted La2/3Ba1/3MnO3 Manganites

机译:Pr和Nd取代的La2 / 3Ba1 / 3MnO3锰的结构和电子跃迁研究

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摘要

The significance of substituting concentrations of Pr and Nd at La-sites, in Lao6vBao33Mn03 perovskite compounds, for the structural and electrical properties have been studied. Polycrystalline samples (Lai..x Prx)0 67Bao 33MnO3 and (Lai.x Ndx)o.67Bao33MnC>3 with x = 0.00, 0.167, 0.333, 0.5, 0,667, 0.833 and 1.0 were synthesized via conventional solid-state reaction in the bulk, All of the samples were calcined at 900°C for 12 hours, pelletized and sintered at 1300°C for 24 hours and investigated In this paper the structural patterns and microstructural properties of bulk samples have been investigated via x-ray diffractometry (XRD) and scanning electron microscopy (SEM). XRD patterns show that these systems are single-phase, with oithorhombic distorted perovskite structures. The electrical property, Tp, was determined by using standard four-point probe resistivity measurements in the temperature range of 20 K to 300 K. The result shows that Pr and Nd dopants shift the value of Tp to a lower temperature. When the temperature is above Tp, T> Tv, the variation of the electrical resistance was found to follow the an Arhenius-type law, p = p0 exp (-EH/KBT). It was used to calculate the activation energy of every sample. The resistivity curves show semiconducting behavior of all samples above their T_p.
机译:研究了La6vBao33Mn03钙钛矿化合物中La位置的Pr和Nd取代浓度对结构和电学性质的意义。通过x = 0.00、0.167、0.333、0.5、0,667、0.833和1.0合成多晶样品(Lai.x Prx)0 67Bao 33MnO3和(Lai.x Ndx)o.67Bao33MnC> 3。所有样品均在900°C下煅烧12小时,造粒并在1300°C下烧结24小时并进行研究。本文通过X射线衍射法(XRD)研究了大块样品的结构模式和微观结构特性。 )和扫描电子显微镜(SEM)。 XRD图谱表明这些系统是单相的,具有斜方晶畸变的钙钛矿结构。通过在20 K至300 K的温度范围内使用标准的四点探针电阻率测量来确定电性能Tp。结果表明,Pr和Nd掺杂剂将Tp的值移至较低的温度。当温度高于Tp时,T> Tv,发现电阻变化遵循Arhenius型定律,p = p0 exp(-EH / KBT)。它用于计算每个样品的活化能。电阻率曲线显示了所有高于T_p的样品的半导体行为。

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