Solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system

摘要

Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(00l) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3-10"4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions inNi(10 ran)/C(2 nm)/Si(001) thin film system.