Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals

摘要

We review our investigations into the residual shallow donor- and acceptor-impurities in bulk InP crystals. We found that shallow donors, assigned to Si, in high-purity bulk InP are electrically passivated by some kind of mobile defect, such as atomic hydrogen, and reactivated by low and high temperature treatment. This indicates that Si as an extrinsic donor has a strong influence on the electrical properties of high-purity InP, while intrinsic defects are considered to be the origin of n-type conductivity in high-purity InP. This article reviews our work on (i) impurity contamination sources, (ii) the reversible variation of donor concentration by thermal annealing and (iii) the identification of the donor- and acceptor- impurities in high-purity InP.