Mechanical Spectroscopy of Pure and Fe-Doped InP Films on Silicon Cantilevers

摘要

The vibrating-reed technique (frequencies 100 Hz to 10 kHz) has been applied to investigate pure and Fe-doped heteroepitaxial InP films (thickness ≈ 3 μm) on microstructurized Si substrate cantilevers (thickness ≈ 35 μm; strain amplitudes 10~(-6) to 10~(-3) at temperature between -160 and 235 ℃. The eigenfrequencies are used to determine Young's modulus of the film. The variation of the loss modulus with temperature and with vibration amplitude is measured and discussed in terms of dislocation motion and multiplication in the InP film considering the effect of iron doping.