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Calculation of the intensity of Touschek electrons in the VEPP-4M storage ring

机译:VEPP-4M存储环中Touschek电子的强度计算

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摘要

Formulas for calculating the intensity of intrabeam scattering of electrons in the Born approximation for the one- and two-dimensional collision models have been obtained for the nonrelativistic and relativistic cases. The Baier-Katkov-Strakhovenko two-dimensional relativistic model with Coulomb corrections has been analyzed. Formulas in the ultrarelativistic limit have been obtained using this model. Different models have been compared. The intensities of Touschek electrons and the polarization contribution have been calculated under the conditions of the detection of scattered particles at the VEPP-4M storage ring. The calculations have been compared to experimental data.
机译:对于非相对论和相对论的情况,已经获得了在一维和二维碰撞模型的伯恩近似中计算电子束内散射强度的公式。分析了带有库仑校正的Baier-Katkov-Strakhovenko二维相对论模型。使用此模型已获得超相对论极限的公式。比较了不同的模型。在检测到VEPP-4M储存环上的散射粒子的条件下,已经计算出了Touschek电子的强度和极化贡献。计算结果已与实验数据进行了比较。

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