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d-symmetry superconductivity due to valence bond correlations

机译:价键相关引起的d对称超导

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It is shown that d-symmetry superconductivity due to valence bond correlations is possible. Valence bond correlations are compatible with antiferromagnetic spin order. In order to explictly construct a homogeneous state with the valence bond structure in the two-dimensional Hubbard model for an arbitrary doping, we have used the variational method based on unitary local transformation. Attraction between holes in the d-channel is due to modulation of hopping by the site population in course of the valence bond formation, and corresponding parameters have been calculated variationally. An important factor for the gap width is the increase in the density of states on the Fermi level due to antiferromagnetic splitting of the band. The gap width and its ratio to the T_c are 2Δ approx= 0.1 t and 2Δ/kT_c approx= 4.5 - 4 for U/t approx= 8. The correspondence between the theoretical phase diagram and experimental data is discussed. The dependence of T_c on the doping δ = |n - 1| and the Fermi surface shape are highly sensitive to the weak interaction t' leading to diagonal hoppings. In the case of t' > 0 and p-doping, the peak on the curve of T_c(δ) occurs at the doping δ_(opt), when the energy of the flattest part of the lower Hubbard subband crosses the Fermi level at k ~ (π,0). In underdoped samples with δ < δ_(opt), the anisotropic pseudogap in the normal state corresponds to the energy difference |E(π,0) - μ| between this part of the spectrum and the Fermi level.
机译:结果表明,由于价键相关性,d对称超导是可能的。价键相关性与反铁磁自旋顺序兼容。为了在二维Hubbard模型中显式构造具有价键结构的均匀态以进行任意掺杂,我们使用了基于unit局部变换的变分方法。 d通道中孔之间的吸引力是由于在价键形成过程中位点种群对跳变的调节,并且相应地计算了相应的参数。间隙宽度的重要因素是由于带的反铁磁分裂导致费米能级上的态密度增加。间隙宽度及其与T_c的比为2Δ大约= 0.1 t,2 U / t大约= 8为2Δ/ kT_c大约4.5-4。讨论了理论相图与实验数据之间的对应关系。 T_c对掺杂δ= | n-1 |的依赖性费米表面形状对导致对角跳变的弱相互作用t'高度敏感。在t'> 0和p掺杂的情况下,当下哈伯德子带的最平坦部分的能量在k处穿过费米能级时,T_c(δ)曲线上的峰值出现在掺杂δ_(opt)处。 〜(π,0)。在δ<δ_(opt)的未掺杂样品中,正常状态下的各向异性伪间隙对应于能量差| E(π,0)-μ|在这部分频谱和费米能级之间。

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