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Peculiarities of Nucleation and Propagation of the Normal Phase in HTSC Materials with an YBCO Film Layer

机译:具有YBCO薄膜层的HTSC材料中正相的成核和传播特性

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The peculiarities of nucleation and the evolution mechanisms of the normal phase as an alternating current passes through a strip YBCO-based HTSC wire in liquid nitrogen are studied experimentally. It is found that depending on the properties and structure of the substrate of the HTSC strip, the evolution of the normal phase is governed by different mechanisms. For a high thermal conductivity along the conductor and intense heat removal to the coolant, the entire sample passes from the superconductive to the resistive state. Upon an increase in the current, its resistance increases and approaches the resistance of the substrate. For materials with a high-resistivity substrate (i.e., with a low thermal conductivity), the nucleation of the normal phase occurs in regions with the smallest superconducting parameters. In these regions, the resistive state is unstable, part of the sample passes after a certain time to the normal state, and the remaining part returns to the superconductive state. A normal domain is formed. The domain size increases linearly with the voltage. It is found that the region of (and the reason for) domain nucleation depends on the extent to which the current exceeds the critical value. If the excess is small, the resistive state exists for a few periods of the alternating current. In this case, the sample temperature increases from period to period, and a normal domain appears in the region of the conductor with a lower superconducting transition temperature. If, however, the resistive state exists during a time interval shorter than a quarter of a period, a normal domain appears in the region with a lower critical current. It is found that upon a jumpwise variation of the applied voltage, several domains can be formed, and for a certain value of the voltage jump, the domain passes to an unstable state and starts moving with a velocity of about 1 mm/s from the sample periphery to the center. The potential and temperature profiles of a normal domain are obtained experimentally. It is found that the maximal temperature increases monotonically with the applied voltage, and the temperature gradient at the domain boundary along the strip is about 100 K/mm. It is shown that the stabilized parameters of the domain and I–V branches occurring during its nucleation are successfully described by the heat balance equation for the stationary case.
机译:实验研究了交流电在液氮中流过基于YBCO的HTSC带状线时,成核的特殊性和正相的演化机理。已经发现,取决于HTSC带材的基底的性质和结构,正相的演变由不同的机制控制。对于沿导体的高导热性以及对冷却剂的大量散热,整个样品都从超导状态转变为电阻状态。当电流增加时,其电阻增加并接近基板的电阻。对于具有高电阻率衬底(即,具有低热导率)的材料,正相的成核发生在具有最小超导参数的区域中。在这些区域中,电阻状态是不稳定的,一段时间后样品的一部分通过进入正常状态,其余部分返回到超导状态。形成正常域。畴尺寸随电压线性增加。发现域成核的区域(及其原因)取决于电流超过临界值的程度。如果过量小,则在交流电的几个周期中存在电阻状态。在这种情况下,样品温度会随着时间的推移而升高,并且在导体的超导转变温度较低的区域中会出现正常区域。但是,如果在小于四分之一周期的时间间隔内存在电阻状态,则正常区域出现在临界电流较低的区域中。可以发现,在施加的电压发生跳跃式变化时,可以形成多个磁畴,并且对于一定的电压跃变值,磁畴进入不稳定状态,并开始以大约1 mm / s的速度移动。样品周边到中心。正常域的电势和温度曲线是通过实验获得的。发现最大温度随施加电压单调增加,并且沿着带的畴边界处的温度梯度为约100K / mm。结果表明,在稳态条件下,通过热平衡方程可以成功地描述在晶核形成过程中畴和IV分支的稳定参数。

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