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Treatment of polishing wastewater from semiconductor manufacturer by dispersed air flotation

机译:分散气浮法处理半导体制造商的抛光废水

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摘要

Treatment of chemical mechanical polishing wastewater containing nanosized silica from semiconductor industry by dispersed air flotation was investigated. Very effective removal of particles from wastewater was found when cationic surfactant, cetyltrimethyl ammonium bromide (CTAB), was used as a collector. The flotation efficiency decreased slightly under a pH of 4.5. The zeta potential increased with a increasing concentration of CTAB, and flocculation of particles by CTAB was found. It is proposed that both the change of interface properties and the aggregation of particles contributed to flotation removal of particles. Longer reaction time and higher dosage were needed when n-dodecyl amine chloride (DAC) was used as a collector, owing to its relatively weak adsorption. The flotation efficiency increased with increasing DAC concentration. The improved flotation efficiency at pH of 10.0 was probably due to the formation of DAC precipitate.
机译:研究了分散气浮法处理半导体工业中含有纳米二氧化硅的化学机械抛光废水的方法。当使用阳离子表面活性剂十六烷基三甲基溴化铵(CTAB)作为捕收剂时,可以非常有效地去除废水中的颗粒。在pH为4.5的条件下,浮选效率略有下降。 zeta电位随着CTAB浓度的增加而增加,并且发现CTAB使颗粒絮凝。提出界面性质的变化和颗粒的聚集都有助于浮选去除颗粒。当使用正十二烷基胺氯化物(DAC)作为捕收剂时,由于其相对较弱的吸附,需要更长的反应时间和更高的剂量。浮选效率随DAC浓度的增加而增加。 pH为10.0时浮选效率的提高可能是由于DAC沉淀的形成。

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