首页> 外文期刊>Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry >Studies on the structural, morphological, optical and electrical properties of Al-doped ZnO nanorods prepared by electrochemical deposition
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Studies on the structural, morphological, optical and electrical properties of Al-doped ZnO nanorods prepared by electrochemical deposition

机译:电化学沉积制备Al掺杂ZnO纳米棒的结构,形貌,光学和电学性质的研究

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A study about the growth mechanism of zinc oxide (ZnO) nanorods and AI-doped zinc oxide (AZO) electrodeposited from the reduction of hydrogen peroxide in zinc chloride solutions was reported. The variations of the electrochemical, morphological, structural, optical and photoelectrochemical properties of the AZO thin films were investigated in terms of different Al concentration in the starting solution. X-ray diffraction spectra demonstrate that films crystalline with the Wurtzite structure with preferential (002) crystallographic orientation having c-axis perpendicular to the substrate. The AZO films obtained forms aligned hexagonal nanorods and depending on the increasing aluminium concentration, the surface morphologies of the films are changed. As Al concentration increased the optical band gap was also found to be increase from 331 to 3.45 eV and in the carrier densities from 1.06 x 10(18) to 2.91 x 10(18) cm(-3) are observed. The blue shift in the band gap energy was attributed to the Burstein-Moss effect. Changes in the photocurrent response are also discussed in the light of Al doping. The amplitude of the photocurrent generated increases steadily from undoped ZnO to the AZO film (2 at%) going from 21 to 58 mu A at 1.0 V. (C) 2015 Elsevier B.V. All rights reserved.
机译:研究了由过氧化氢在氯化锌溶液中还原而电沉积的氧化锌(ZnO)纳米棒和AI掺杂的氧化锌(AZO)的生长机理。根据起始溶液中不同的铝浓度,研究了AZO薄膜的电化学,形态,结构,光学和光电化学性质的变化。 X射线衍射光谱表明,具有具有优先(002)晶体学取向的纤锌矿结构的晶体膜具有垂直于基板的c轴。所获得的AZO膜形成排列的六角形纳米棒,并且随着铝浓度的增加,膜的表面形态发生变化。随着Al浓度的增加,还发现光学带隙从331增加到3.45 eV,并且在载流子密度中观察到从1.06 x 10(18)到2.91 x 10(18)cm(-3)。带隙能量的蓝移归因于Burstein-Moss效应。还根据铝掺杂讨论了光电流响应的变化。产生的光电流幅度从未掺杂的ZnO到AZO膜(2 at%)在1.0 V时从21μA稳定地增加到58μA(C)2015 Elsevier B.V.保留所有权利。

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