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首页> 外文期刊>Journal of Computational and Applied Mathematics >Numerical approximation of Turing patterns in electrodeposition by ADI methods
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Numerical approximation of Turing patterns in electrodeposition by ADI methods

机译:用ADI方法数值模拟电沉积中的图灵模式

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In this paper we study the numerical approximation of Turing patterns corresponding to steady state solutions of a PDE system of reaction-diffusion equations modeling an electrodeposition process. We apply the Method of Lines (MOL) and describe the semi-discretization by high order finite differences in space given by the Extended Central Difference Formulas (ECDFs) that approximate Neumann boundary conditions (BCs) with the same accuracy. We introduce a test equation to describe the interplay between the diffusion and the reaction time scales. We present a stability analysis of a selection of time-integrators (IMEX 2-SBDF method, Crank-Nicolson (CN), Alternating Direction Implicit (ADI) method) for the test equation as well as for the Schnakenberg model, prototype of nonlinear reaction-diffusion systems with Turing patterns. Eventually, we apply the ADI-ECDF schemes to solve the electrodeposition model until the stationary patterns (spots & worms and only spots) are reached. We validate the model by comparison with experiments on Cu film growth by electrodeposition.
机译:在本文中,我们研究了与电沉积过程建模的反应扩散方程的PDE系统的稳态解相对应的图灵模式的数值逼近。我们应用线法(MOL),并通过扩展中央差分公式(ECDF)给出的高阶空间有限差分来描述半离散化,该近似差分以相同的精度近似Neumann边界条件(BCs)。我们引入一个测试方程来描述扩散和反应时间尺度之间的相互作用。我们为测试方程以及Schnakenberg模型,非线性反应的原型提供了时间积分器的稳定性分析(IMEX 2-SBDF方法,Crank-Nicolson(CN),交替方向隐式(ADI)方法)图灵模式的扩散系统。最终,我们采用ADI-ECDF方案来求解电沉积模型,直到达到固定模式(斑点和蠕虫,只有斑点)为止。通过与通过电沉积生长铜膜的实验进行比较,我们验证了该模型。

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