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Microcalorimetric, FTIR, and DFT studies of the adsorption of methanol, ethanol, and 2,2,2-trifluoroethanol on silica

机译:微量热法,FTIR和DFT研究甲醇,乙醇和2,2,2-三氟乙醇在硅胶上的吸附

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The adsorption and reaction of methanol, ethanol, and 2,2,2-trifluoroethanol on silica at 300 K were studied by combining microcalorimetric and infrared spectroscopic (FTIR) measurements with quantum-chemical calculations based on density-functional theory (DFT). Methanol, ethanol, and 2,2,2-trifluoroethanol adsorb molecularly on silica via formation of hydrogen bonds, with initial heats of interaction of 78, 100, and 90 (+/-2) kJ/mol, respectively. Methanol and 2,2,2-trifluoroethanol adsorbed on silica can be removed by evacuation at 473 K, whereas small amounts (similar to 5 mu mol/g) of ethoxy species remain on silica after evacuation at 573 K. Two pathways are considered for the alkoxylation of silica: one pathway involving protonation of the adsorbed alcohol by surface hydroxyls and the other involving protonation and subsequent cleavage of Si-OH bonds or SiO-Si bridges by the adsorbed alcohol. The activation energies for the formation of methoxy, ethoxy, and 2,2,2-trifluoroethoxy species via the first pathway are estimated to be 309, 285, and 321 kJ/mol, respectively, whereas activation energies for the second pathway are estimated to be 117, 117, 138 kJ/mol. The high activation barrier for the first pathway is caused by the localization of positive charge in the alkyl group of the transition state, which is made difficult by the weak acidity of silica and the instability of methyl, ethyl, and 2,2,2-trifluoroethyl carbenium ions. The second proposed mechanism is controlled mainly by the acid strength of the alcohols and the extent of delocalization of electron density in the four-member ring present in the transition states. (C) 1998 Academic Press. [References: 61]
机译:通过将微量热和红外光谱(FTIR)测量与基于密度泛函理论(DFT)的量子化学计算相结合,研究了甲醇,乙醇和2,2,2-三氟乙醇在二氧化硅上的吸附和反应。甲醇,乙醇和2,2,2-三氟乙醇通过形成氢键在二氧化硅上分子吸附,相互作用的初始热分别为78、100和90(+/- 2)kJ / mol。可以通过在473 K下抽真空除去吸附在二氧化硅上的甲醇和2,2,2-三氟乙醇,而在573 K抽真空后在二氧化硅上残留少量乙氧基物质(大约5μmol / g)。二氧化硅的烷氧基化:一种途径涉及通过表面羟基使吸附的醇质子化,而另一种途径涉及质子化并随后被吸附的醇裂解Si-OH键或SiO-Si桥。通过第一途径形成甲氧基,乙氧基和2,2,2-三氟乙氧基物质的活化能估计分别为309、285和321 kJ / mol,而第二途径的活化能估计为为117、117、138 kJ / mol。第一条途径的高活化障碍是由于过渡态烷基中正电荷的局部化而引起的,这是由于二氧化硅的弱酸性和甲基,乙基和2,2,2-的不稳定性而变得困难的。三氟乙基碳鎓离子。提出的第二种机理主要受醇的酸强度和过渡态存在的四元环中电子密度的离域程度控制。 (C)1998年学术出版社。 [参考:61]

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