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Electronic, Structural and Magnetic Properties of Light Transition-Metal Doped Wurtzite Cadmium Sulfide

机译:轻过渡金属掺杂纤锌矿型硫化镉的电子,结构和磁性

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The electronic, structural and magnetic properties of light-transition-metal element (TM = Sc, V, Ti, Cr and Mn) doped cadmium sulfide Cd_(1-x)TM_xS are studied using spin-polarized density function theory. The Perdew Burke Ernzerhof (PBE) exchange and correlation functional is employed within the generalized gradient approximation (GGA). Our results show that the substitutional Sc~(2+), V~(2+), Ti~(2+), Mn~(2+) and Cr~(2+) magnetic ions can easily be incorporated on cation sites of the host lattice of CdS and induce spin polarized localized states in the gap or near the conduction band and generate local magnetic moments on doped atoms with values 0.527 μ_B, 1.723 μ_B, 2.752 μ_B, 3.766 μ_B and 4.471 μ_B respectively. The spin exchange splitting energy Δ_xd increases consistently with increase in atomic number of the dopant. The values of Δ_x(pd) are negative for Cr and Mn and positive for Sc, Ti and V. It means that the effective potential for minority spin states is more attractive than that of majority spin states for Cr and Mn and vice versa for Sc, Ti and V. The s-d exchange constant N_oα and pd exchange constant N_oβ are showing the magnetic nature of these TM-doped CdS compounds. It is observed that p-d hybridization reduces the local magnetic moment of the doped CdS from its free space charge value and produces small local magnetic moments on the nonmagnetic Cd and S host sites. CdS provides us a variety of compounds, doping of Sc, Ti and V forms degenerate semiconductors, Cr forms half metallic and Mn p-type semiconductor. For degenerated semiconductors we have calculate the Burstein-Moss shift energy.
机译:利用自旋极化密度函数理论研究了轻过渡金属元素(TM = Sc,V,Ti,Cr和Mn)掺杂的硫化镉Cd_(1-x)TM_xS的电子,结构和磁性。在广义梯度逼近(GGA)中采用了Perdew Burke Ernzerhof(PBE)交换和相关函数。我们的结果表明,取代的Sc〜(2 +),V〜(2 +),Ti〜(2 +),Mn〜(2+)和Cr〜(2+)磁性离子可以很容易地掺入到CdS的主晶格在间隙或导带附近感应自旋极化的局部态,并在掺杂原子上产生局部磁矩,分别为0.527μB,1.723μB,2.752μB,3.766μB和4.471μB。自旋交换分裂能Δ_xd随着掺杂剂原子数的增加而一致地增加。 Cr和Mn的Δ_x(pd)值为负,而Sc,Ti和V的Δ_x(pd)值为正。这意味着对于Cr和Mn而言,少数自旋态的有效电势比多数自旋态的有效电势更具吸引力,而对于Sc则相反,sd交换常数N_oα和pd交换常数N_oβ显示了这些TM掺杂的CdS化合物的磁性。观察到,p-d杂化从其自由空间电荷值降低了掺杂的CdS的局部磁矩,并且在非磁性Cd和S宿主位点上产生了较小的局部磁矩。 CdS提供了多种化合物,掺杂Sc,Ti和V会形成简并的半导体,Cr会形成半金属和Mn p型半导体。对于退化的半导体,我们已经计算了Burstein-Moss位移能。

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