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Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film

机译:煅烧温度对HMDS处理的有序介孔二氧化硅薄膜影响的研究

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摘要

To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted -OH with -Si(CH3)(3) groups On the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal Structural, electrical, and mechanical Properties was determined to be approximately 300 degrees C. (C) 2008 Elsevier Inc. All rights reserved.
机译:为了减少超大规模集成电路中的信号延迟,需要具有低介电常数的金属间电介质。有序介孔二氧化硅膜由于其低介电常数和优异的机械性能而适合用作金属间电介质。为了降低介电常数,通过六甲基二硅氮烷(HMDS)处理对由四乙氧基硅烷/甲基三乙氧基硅烷二氧化硅前体和Brij-76嵌段共聚物制备的有序介孔二氧化硅膜进行了表面改性。 HMDS处理在二氧化硅表面上用-Si(CH3)(3)基团取代-OH。处理后,将有序中孔二氧化硅膜在各种煅烧温度下煅烧,并将获得最佳结构,电气和机械性能的煅烧温度确定为约300摄氏度。(C)2008 Elsevier Inc.保留所有权利。

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