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首页> 外文期刊>Journal of Adhesion Science and Technology: The International Journal of Theoredtical and Basic Aspects of Adhesion Science and Its Applications in All Areas of Technology >Adhesion Performance and UV-Curing Behaviors of Interpenetrated Structured Pressure Sensitive Adhesives with 3-MPTS for Si-Wafer Dicing Process
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Adhesion Performance and UV-Curing Behaviors of Interpenetrated Structured Pressure Sensitive Adhesives with 3-MPTS for Si-Wafer Dicing Process

机译:硅晶圆切割过程中3-MPTS互穿结构压敏胶的粘合性能和UV固化行为

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摘要

As Si-wafers, as used in the electronic industry, become thinner and thinner, it is important to investigate the conditions which are suitable for easily peelable acrylic dicing tapes. In the 'pick-up' process, the adhesion strength decreased after UV irradiation as a result of polymer network formation. In this study, interpenetrating polymer network (IPN) structured acrylic pressure sensitive adhesives (PSAs) were investigated with two different types of UV irradiation - a steady UV irradiation and a pulsed UV irradiation of 100 mJ/cm~2. The PSAs binder contained 2-ethylhexyl acrylate (2-EHA), acrylic acid (AA) and 3-methacryloxypropyl trimethoxysilane (3-MPTS). The hexafunctional monomer, dipentaerythritol hex-acrylate (DPHA) and 3-methacryloxypropyl trimethoxysilane (3-MPTS) were used as diluent monomers. The adhesion performance as related to the peel strength and the tack properties on the Si-wafer substrates, was examined with increasing UV dose. The effect of UV-curing on the behavior and viscoelastic properties of the 'pick-up' acrylic tapes was investigated using Fourier transform infrared - attenuated total reflectance spectroscopy (FTIR-ATR) and an advanced rheometric expansion system (ARES). It is also necessary to consider the contaminants on the Si-wafer substrates left behind after releasing the dicing tapes, because of possible damage to the Si-wafers and subsequent processes. Field emission scanning electron microscopy (FE-SEM) and X-ray photoelectron spectroscopy (XPS) analysis revealed little residue on the Si-wafer after removing me tapes and after more than the specific level of UV dose.
机译:随着用于电子工业的硅晶片变得越来越薄,重要的是研究适合于容易剥离的丙烯酸切割胶带的条件。在“拾取”过程中,由于聚合物网络的形成,紫外线照射后的粘合强度降低。在这项研究中,研究了互穿聚合物网络(IPN)结构的丙烯酸压敏胶粘剂(PSA),采用两种不同类型的UV辐射-稳定的UV辐射和100 mJ / cm〜2的脉冲UV辐射。该PSA粘合剂包含丙烯酸2-乙基己酯(2-EHA),丙烯酸(AA)和3-甲基丙烯酰氧基丙基三甲氧基硅烷(3-MPTS)。六官能单体,季戊四醇六丙烯酸酯(DPHA)和3-甲基丙烯酰氧基丙基三甲氧基硅烷(3-MPTS)被用作稀释剂单体。随着紫外线剂量的增加,检查了与剥离强度和在硅晶圆基材上的粘性相关的粘合性能。使用傅立叶变换红外衰减全反射光谱(FTIR-ATR)和先进的流变膨胀系统(ARES),研究了UV固化对“拾取”丙烯酸胶带行为和粘弹性的影响。还必须考虑在释放切割带之后留在硅晶片基板上的污染物,因为这可能会损坏硅晶片及其后续工艺。场发射扫描电子显微镜(FE-SEM)和X射线光电子能谱(XPS)分析显示,除去胶带并超过特定的紫外线剂量后,硅晶片上几乎没有残留。

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