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Unusual electrical resistivity anomalies of thulium thin films at low temperatures

机译:thin薄膜在低温下的异常电阻率异常

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摘要

High precision electrical resistance measurements were performed in the temperature range from 4.2 K up to room temperature on a pure thulium bulk sample with a high residual resistivity ratio, RRR=146, and on thulium thin films in the thickness interval from 25 to 115 nm. The observed size-effect of the electrical resistivity is in accordance with theory and it is without resistivity vs. thickness anomalies. The typical "hump-backed" anomaly in the resistivity vs. temperature dependence was observed for the Tm bulk sample near the Neel temperature. In contrast, unexpected resistivity vs. temperature anomalies were observed for thulium thin films in the low temperature region below similar to 60 K and near similar to 170 K. A crystal structure study using X-ray diffraction revealed that these thin films were single phase with the Tm hcp crystal structure and with preferential orientation of crystallites. (C) 1998 Elsevier Science S.A. All rights reserved. [References: 20]
机译:在4.2 K到室温的温度范围内,对具有高残留电阻率RRR = 146的纯th块状样品以及厚度范围为25至115 nm的th薄膜进行了高精度电阻测量。观察到的电阻率的尺寸效应与理论一致,并且没有电阻率与厚度异常之间的关系。对于接近Neel温度的Tm块状样品,观察到电阻率与温度的关系具有典型的“驼峰式”异常。相反,在低于60 K和接近170 K的低温区域,th薄膜观察到了意外的电阻率随温度变化的异常。使用X射线衍射进行的晶体结构研究表明,这些薄膜是单相的。 Tm hcp晶体结构和微晶的优先取向。 (C)1998 Elsevier Science S.A.保留所有权利。 [参考:20]

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