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The Open-Circuit Ennoblement of Alloy C-22 and Other Ni-Cr-Mo Alloys

机译:C-22合金和其他Ni-Cr-Mo合金的开路保护

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摘要

The open-circuit corrosion and anodic oblation behavior of the C-series of Ni-Cr-Mo alloys (C-4, C-276, C-2000, and C-22) and alloy 625 have been studied ai 25 deg C and 75 deg C in 1.0 mol-L~(-1) NaCl + 1.0 mol-L~(-1) H_2SO_4. A combination of oven-circuit potential, potentiostatic polarization, and electrochemical impedance spectroscopy were employed in the study. The composition of the films formed was determined by x-ray photo-electron spectroscopy and time-of-flight secondary ion mass spectrometry. Passive oxide film resistances increase and defect oxide film concentrations decrease as films thicken and chromium and molybdenum segregate to the alloy/oxide and oxide/solution interfaces, respectively. The high-chromium alloys exhibit higher film resistances and lower film defect concentrations consistent with the more positive potentials observed on these alloys. The results show that the observed ennoblement in corrosion potentials with lime is coupled to the Cr/Mo segregation -process and the suppression of defect injection at the alloy/oxide interface. By all measures, C-22 exhibited the best passive properties.
机译:在25℃和25℃下研究了C系列Ni-Cr-Mo合金(C-4,C-276,C-2000和C-22)和625的开路腐蚀和阳极钝化行为。 75℃在1.0 mol-L〜(-1)NaCl + 1.0 mol-L〜(-1)H_2SO_4中。研究中采用了烤箱电路电势,恒电位极化和电化学阻抗谱的组合。通过X射线光电子能谱和飞行时间二次离子质谱法确定所形成的膜的组成。随着膜变厚,铬和钼分别偏析到合金/氧化物和氧化物/溶液界面,被动氧化物膜的电阻会增加,缺陷氧化物膜的浓度会降低。高铬合金表现出更高的膜电阻和更低的膜缺陷浓度,与在这些合金上观察到的更高的正电位一致。结果表明,观察到的用石灰腐蚀电位的高位与Cr / Mo偏析过程以及合金/氧化物界面处缺陷注入的抑制有关。通过所有措施,C-22表现出最佳的被动性能。

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