Photoacoustic elastic bending method in microelectronics - invited paper

摘要

The basic concept, development and application of the photoacoustic elastic bending method are given. The photoacoustic effect as a function of modulation frequency including the elastic bending contribution to the photoacoustic signal is investigated. The theoretical model for a typical detection configuration was given and the relations for elastic bending and photoacoustic signal were derived by the dynamic theory of the thin plate. The applications of the PA elastic bending method in investigation of thermal and electronic transport processes in semiconductors, plasmaelastic and thermoelastic effects, metal-semiconductor structures and ion-modified layers were presented.