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Study of edge magnetoplasma excitations in two-dimensional electron systems with various edge depletion profiles

机译:具有不同边沿耗尽特征的二维电子系统中边沿等离子体的激发研究

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摘要

Resonant microwave absorption by two-dimensional electrons has been measured using coplanar and strip methods. The influence of the edge of a two-dimensional system on the dispersion of edge magnetoplasmons has been studied. It has been found that the edge width can be varied within wide limits (by almost two orders of magnitude) by changing the etching depth of the crystal. It has been shown that the edge of the electron system in the case of etching through the quantum well has a width of about 0.2 μm, whereas the edge in the case of shallow etching (e. g., down to the donor layer) is smooth and can be as wide as 12 μm. The influence of a logarithmic factor, depending on the edge width of the electron system, on edge magnetoplasma excitations dispersion has been studied.
机译:已经使用共面和剥离方法测量了二维电子对共振微波的吸收。研究了二维系统边缘对边缘磁等离子体的分散的影响。已经发现,通过改变晶体的蚀刻深度,可以在很宽的范围内(几乎两个数量级)改变边缘宽度。已经表明,在通过量子阱进行蚀刻的情况下,电子系统的边缘具有约0.2μm的宽度,而在进行浅蚀刻(​​例如,向下至施主层)的情况下,电子系统的边缘是光滑的并且可以宽度可达12μm。研究了取决于电子系统边缘宽度的对数因子对边缘磁等离子体激发色散的影响。

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