Giant change in the intensity of tunneling afterglow in excited ZnO quantum dots induced by the spin reorientation of electron-hole pairs in static and microwave magnetic fields

摘要

Long afterglow has been detected in light-excited ZnO quantum dots caused by the spin-dependent tunneling recombination of electron and hole centers. A giant increase in the intensity of afterglow upon a change in the spin orientation of electron and hole centers has been observed under electron paramagnetic resonance conditions, which allowed these centers to be identified.