Polymers for Nanolitography: New Strategy of the Design and Synthesis of Copolymers Based on Methacrylic Acid Derivatives with Cyclobutyldicyclopropylmethyloxymethyl, 3-Sulfolanyl, and 1-Perfluoroethylcyclohexyl Pendant Groups

摘要

Analysis of the trend to minimize the characteristic dimensions of integrated circuits shows the recent successful manufacture of microcircuits with of 65-, 45-, 32-, and 22-nm topological design rules [1,2]. Important intermediate stages in implementation of this task are successful mastering and development of lithography using the 193-nm radiation from an ArF excimer laser. The adaptation of this lithography to the manufacture of microcircuits with 65-nanometer design rules is associated with the solution of quite serious problems concerning the development of the corresponding resists with chemical amplification [3].