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The photoinduced surface-relief-grating formation behavior of side-chain azo polymers with narrow M_r distribution

机译:M_r分布窄的侧链偶氮聚合物的光诱导表面浮雕光栅形成行为

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摘要

Surface-relief-grating formation induced by Ar~+ laser irradiation was studied using two series of side-chain azo polymers with narrow M_r distribution. The methacrylate-based azo polymers were synthesized using an approach that combined atom transfer radical polymerization and post-polymerization azo-coupling. The azo polymers were characterized using spectroscopic methods, GPC measurement as well as thermal analysis. The surface-relief-grating formation behavior of the azo polymers was examined by irradiating thin polymer films with interfering Ar~+ laser beams. Whilst the M_r of the two polymers had no effect upon surface-relief-grating inscription rate, in contrast, different rates of grating formation and modulation depths were observed for the two polymers.
机译:利用两套窄M_r分布的侧链偶氮聚合物研究了Ar〜+激光辐照引起的表面浮雕形成。使用结合了原子转移自由基聚合和后聚合偶氮偶联的方法合成了基于甲基丙烯酸酯的偶氮聚合物。使用光谱方法,GPC测量以及热分析对偶氮聚合物进行表征。通过用干扰的Ar〜+激光束辐照聚合物薄膜,检查了偶氮聚合物的表面浮雕形成行为。两种聚合物的M_r对表面浮雕铭刻率没有影响,相反,两种聚合物的光栅形成速率和调制深度不同。

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