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Plasma etching carbon nanotube arrays and the field emission properties

机译:等离子刻蚀碳纳米管阵列及其场发射特性

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We study the morphologies and the field emission properties of carbon nanotube (CNT) arrays grown on silicon Substrate before and after AI- and O_2 plasmas etching. The CNT arrays are synthesized by chemical vapor deposition of ethylene and argon gases in the presence of iron catalysts. Plasma etching is carried out in a DC magnetron-sputtering apparatus. After the treatmeiit, a novel structure of needle-shaped bundles on the surface of CNT arrays is obtained, whose morphologies will be quite different under varied conditions. Enhanced field emission properties are observed after proper treatment.
机译:我们研究了在AI-和O_2等离子体刻蚀前后硅衬底上生长的碳纳米管(CNT)阵列的形貌和场发射特性。碳纳米管阵列是通过在铁催化剂存在下化学气相沉积乙烯和氩气而合成的。等离子蚀刻在DC磁控溅射设备中进行。处理后,获得了CNT阵列表面上的针状束的新型结构,其形态在不同条件下将完全不同。经过适当处理后,观察到增强的场发射特性。

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