首页> 外文期刊>Desalination: The International Journal on the Science and Technology of Desalting and Water Purification >Rejection of As(III) and As(V) from arsenic contaminated water via electro-cross-flow negatively charged nanofiltration membrane system
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Rejection of As(III) and As(V) from arsenic contaminated water via electro-cross-flow negatively charged nanofiltration membrane system

机译:通过电错流负电荷纳滤膜系统去除砷污染水中的砷(III)和砷(V)

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摘要

A specially designed electro-cross-flow nanofiltration (NF) membrane system was used for this investigation. To enhance the rejection of arsenic ionic species like H2AsO_4~-, a NF membrane having a negative surface charge was fabricated via the interfacial polymerization process. The membrane was characterized by SEM, AFM, surface charge density, molecular weight cut-off (MWCO), total and skin thickness and pure water flux. The parameters that affected the rejections of As(III) and As(V) were studied; they included the initial arsenic concentration, the applied potential, pH of the feed, the cross-flow filtration pressure and the presence of different salts in the feed. Among those parameters, the pH of the feed greatly affected As(V) rejection; As(V) ([As(V)]_o= 1000 ppb) rejection was increased from 72.3 to 98.5% when pH of the feed was changed from 3.0 to 10.0. This might be due to the fact that higher pH enhanced the formation of negative divalent anion like HAsO_4~(2-) which should be rejected more effectively by the negative surface charge of the NF membrane. Beside the effect of the negative surface charge of the membrane, applied potential increased the As(V) rejection by 48.2% when the applied potential was increased from 0 to 2.0V for a feed containing 1000 ppb initially. For the same change of applied potential rejection of As(III) was increased from 52.3 to 70.4%; this might be the result of the formation of anionic species like H2AsO_3~- from the neutral molecule of H3AsO3 by the applied potential.
机译:专门设计的电错流纳滤(NF)膜系统用于此研究。为了增强对诸如H 2 AsO 4-的砷离子物质的排斥,通过界面聚合工艺制备了具有负表面电荷的NF膜。该膜通过SEM,AFM,表面电荷密度,分子量截留值(MWCO),总表皮厚度和纯水通量表征。研究了影响As(III)和As(V)截留率的参数;它们包括初始砷浓度,施加的电势,进料的pH,错流过滤压力以及进料中是否存在不同的盐。在这些参数中,进料的pH值极大地影响了As(V)的排阻。当进料的pH从3.0改变为10.0时,As(V)([As(V)] _ o = 1000ppb)的排斥率从72.3增加到98.5%。这可能是由于较高的pH值会增强诸如HAsO_4〜(2-)之类的负二价阴离子的形成,而后者应被NF膜的负表面电荷更有效地排斥。除了膜的负表面电荷的影响外,最初将含有1000 ppb的进料的施加电势从0V增加到2.0V时,施加电势将As(V)排斥率提高了48.2%。对于相同的变化,As(III)的施加电势抑制从52.3%增加到70.4%;这可能是由于所施加的电位从H3AsO3的中性分子形成了阴离子物种,如H2AsO_3〜-的结果。

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