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K-M-S (keep-molecules sputtering) deposition of optical MgF{sub}2 thin films

机译:MgF {sub} 2光学薄膜的K-M-S(保留分子溅射)沉积

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摘要

Magnesium fluoride thin film depositions by rf magnetron sputtering are successfully carried out When magnesium fluoride targets at high temperature were sputtered in oxygen, Mg, O, and MgF emission lines were observed. This indicates thatsputtering in the form of molecules occurred. The refractive index of the obtained film was near 1.39, and the extinction coefficient k was less than 1×10{sup}-4 in the visible region, small enough for anti-reflection coatings. The film deposited without additional heat supplied to the substrate was as hard as that deposited on a heated substrate by vapor evaporation. The deposition rate was 50-350 nm/min. The ratios of F:Mg and O:Mg in the film were near 1.9, and near 0.0, respectively. Those areconcluded that high temperature of the target keeps sputtered particles in the molecular state, and that most of molecules are still preserved at substrates. This deposition technique may be applied for various optical films because of its advantages over vapor evaporation in factory automation, and applicability to substrates at room temperature.
机译:当在氧中溅射高温下的氟化镁靶时,观察到了Mg,O和MgF发射线,从而成功地通过rf磁控溅射法沉积了氟化镁薄膜。这表明发生了分子形式的溅射。所得膜的折射率接近1.39,并且在可见光区域的消光系数k小于1×10 {sup} -4,对于防反射涂层而言足够小。在没有额外热量供应到基板的情况下沉积的膜与通过蒸气蒸发沉积在加热的基板上的膜一样坚硬。沉积速率为50-350nm / min。膜中F∶Mg和O∶Mg的比率分别接近1.9和接近0.0。结论是靶的高温使溅射的粒子保持分子状态,并且大多数分子仍保留在底物上。由于该沉积技术相对于工厂自动化中的蒸气蒸发具有优势,并且可在室温下应用于基材,因此可以应用于各种光学膜。

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