首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Approximation of crystallite size and microstrain via XRD line broadening analysis in TiSiN thin films
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Approximation of crystallite size and microstrain via XRD line broadening analysis in TiSiN thin films

机译:通过XRD线展宽分析在TiSiN薄膜中的晶粒尺寸和微应变近似

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摘要

In the present work, an approximation method was used to determine both the crystallite size and microstrain from XRD profile of TiSiN thin film deposited on high speed steel substrates. The estimated crystallite size obtained via this approximation method was in good agreement with the resulting microstructure observation using the scanning electron microscope (SEM). The approximation method was used to determine microstrain, and its corresponding compressive stress was related to the result of scratch adhesion measurement of the TiSiN thin film. Comparison of crystallite size and microstrain were investigated using different definitions of line broadening, β. The approximation method was found to be useful in cases when crystallite size and microstrain contributed in the line broadening simultaneously. This research demonstrated the reliability of using the approximation method in determining the resulting crystallite size and microstrain from the XRD line broadening analysis in the TiSiN thin films.
机译:在目前的工作中,使用一种近似方法从沉积在高速钢基材上的TiSiN薄膜的XRD轮廓确定微晶尺寸和微应变。通过该近似方法获得的估计的微晶尺寸与使用扫描电子显微镜(SEM)观察到的微观结构非常吻合。采用近似法确定了微应变,其相应的压应力与TiSiN薄膜的划痕附着力测量结果有关。使用线宽β的不同定义研究了微晶尺寸和微应变的比较。发现在微晶尺寸和微应变同时影响线扩展的情况下,近似方法很有用。这项研究表明,在TiSiN薄膜的XRD线展宽分析中,使用近似方法确定所得微晶尺寸和微应变的可靠性。

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