CURRENT-VOLTAGE ANOMALIES ON POLYCRYSTALLINE GDSI2/P-SI SCHOTTKY JUNCTIONS DUE TO GRAIN BOUNDARIES

摘要

The current-voltage characteristics of epitaxial orthorhombic, textured orthorhombic, polycrystalline orthorhombic, and polycrystalline hexagonal GdSi2/(100)p-Si Schottky structures prepared by solid phase epitaxy are compared. It is concluded that the anomalous I-V characteristics measured in the polycrystalline GdSi2/p-Si junctions, and the much higher values are scatters of the ideality factor and of the series resistance obtained for the polycrystalline structures may be explained by the oxidation of the Gd remaining near the grain boundaries in the GdSi2 layer. [References: 11]