首页> 外文期刊>Zeitschrift fur Naturforschung, B. A Journal of Chemical Sciences >The Silicides YT_2Si_2 (T =Co, Ni, Cu, Ru, Rh, Pd): A Systematic Study by ~(89)Y Solid-state NMR Spectroscopy
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The Silicides YT_2Si_2 (T =Co, Ni, Cu, Ru, Rh, Pd): A Systematic Study by ~(89)Y Solid-state NMR Spectroscopy

机译:硅化物YT_2Si_2(T = Co,Ni,Cu,Ru,Rh,Pd):〜(89)Y固态NMR光谱系统研究

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摘要

The ThCr_2Si_2-type silicides YT_2Si_2 (T =Co, Ni, Cu, Ru, Rh, Pd) were synthesized from the elements by arc-melting. They were characterized by powder X-ray diffraction, and the structures were refined on the basis of single-crystal X-ray diffractometer data. The course of the lattice parameters shows a distinct anomaly for YRu_2Si_2 which has by far the smallest c/a ratio along with elongated Y- Si distances. Systematic ~(89)Y solid-state NMR spectra show large Knight shifts arising from unpaired conduction electron spin density near the Fermi edge. The Knight shift decreases with increasing valence electron count (VEC), reflecting the sensitivity of this parameter to electronic properties. The particularly strong structural distortion observed in YRu_2Si_2 manifests itself in a sizeable magnetic shielding anisotropy. Electronic structure calculations for YRu_2Si_2 and YRh_2Si_2 reveal similar projected density of states (PDOS) shapes with an energy upshift of the Fermi level in YRh_2Si_2 due to the extra electron brought in by Rh. As a consequence, the PDOS at the Fermi energy is twice as large in the Ru compound as in the Rh compound. While both compounds show the major bonding interaction within the T_2Si_2 layers, YRh_2Si_2 exhibits significantly stronger Y-Si bonding.
机译:通过电弧熔炼由元素合成了ThCr_2Si_2型硅化物YT_2Si_2(T = Co,Ni,Cu,Ru,Rh,Pd)。通过粉末X射线衍射对它们进行表征,并根据单晶X射线衍射仪数据对结构进行精制。晶格参数的过程显示出YRu_2Si_2的异常,它具有迄今为止最小的c / a比以及延长的Y-Si距离。系统的〜(89)Y固态NMR光谱显示大的奈特位移是由于费米边缘附近的不成对的传导电子自旋密度引起的。奈特位移随着价电子数(VEC)的增加而降低,反映出该参数对电子特性的敏感性。在YRu_2Si_2中观察到的特别强的结构变形表现为相当大的磁屏蔽各向异性。 YRu_2Si_2和YRh_2Si_2的电子结构计算显示,由于Rh引入了多余的电子,YRh_2Si_2中费米能级的能量上移具有相似的投影态(PDOS)形状。结果,Ru化合物中费米能级下的PDOS两倍于Rh化合物。虽然两种化合物都在T_2Si_2层内显示出主要的键相互作用,但YRh_2Si_2却表现出明显更强的Y-Si键。

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