Preparation and Characterization of Al2O3 Doped TiO2 Nanocomposites Prepared from Simple Sol-Gel Method

摘要

Al2O3 doped TiO2 samples were prepared by the simple sol-gel method. The prepared samples were annealed at 400 degrees C for 1 h in an open air atmosphere. The dielectric properties, AC electrical conductivity (sigma(ac)), dielectric constant (epsilon'), dielectric loss (epsilon '') and the loss tangent (tan delta) of the prepared Al2O3 doped TiO2 nanocomposites were studied under a wide frequency and temperature range. The dielectric loss values of the prepared samples were measured at 50 Hz and 5 MHz and the values were found to be in the range of 0.11-1.73 at 40 degrees C and 0.13-4.39 at 100 degrees C. The microstructures of the prepared samples were also studied using high-resolution transmission electron microscopy (HRTEM) analysis.