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Effect of oxidizing agents on the hydrometallurgical purification of metallurgical grade silicon

机译:氧化剂对冶金级硅湿法冶金纯化的影响

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The effects of two different oxidizing agents viz. ferric chloride and ammonium persulfate on the purification of metallurgical grade silicon (MGSi) by leaching with hydrochloric acid were investigated as a function of temperature, particle size and hydrochloric acid concentration. It was found that the addition of oxidizing agent improved the extraction of impurities from the MGSi as compared to that in the absence of any oxidizing agent. The extraction of impurities from the MGSi increased with a decrease in particle size and increase in temperature and hydrochloric acid concentration. By leaching MGSi with 10 M hydrochloric acid in the presence of 0.1 M ferric chloride and at 90 °C a maximum of 66% Ca, 92% Cr, 27% Fe, 98% Cu, 98% Ni and 89% Zn were removed. The unleachable Si-Fe and Si-Fe-Ti phases in the grain boundaries of MGSi hindered the extraction of Fe and Ti.
机译:两种不同氧化剂的作用。研究了氯化铁和过硫酸铵对盐酸浸提法提纯冶金级硅(MGSi)的作用,它是温度,粒度和盐酸浓度的函数。已经发现,与不存在任何氧化剂的情况相比,添加氧化剂改善了从MGSi中杂质的提取。随着颗粒尺寸的减小以及温度和盐酸浓度的增加,从MGSi中提取的杂质增加。通过在0.1M氯化铁存在下,在90°C下用10 M盐酸浸出MGSi,最多可去除66%的Ca,92%的Cr,27%的Fe,98%的Cu,98%的Ni和89%的Zn。 MGSi晶界中无法脱出的Si-Fe和Si-Fe-Ti相阻碍了Fe和Ti的提取。

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