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首页> 外文期刊>WSEAS Transactions on Circuits and Systems >Composite Second Generation Current Conveyor Based Tunable MOS-C Quadrature Sinusoidal Oscillator Design and Comparative Performance Analysis
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Composite Second Generation Current Conveyor Based Tunable MOS-C Quadrature Sinusoidal Oscillator Design and Comparative Performance Analysis

机译:基于复合第二代电流传输器的可调谐MOS-C正交正弦振荡器的设计和比较性能分析

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摘要

In this paper, a new voltage mode tunable MOS-C quadrature sinusoidal oscillator circuit employing composite second-generation current conveyor (CCCII) is presented. The proposed topology employs two CCCII and four grounded components. CCCII is implemented by using two CCIIs as sub-circuit. This implementation technique makes it possible to employ the circuit by commercially available integrated circuits that can be used as current conveyor such as AD844. The validity of the proposed circuit is verified by PSPICE simulation program. Simulation is performed for both CMOS based CCCII using MOSIS 0.35 μm process parameters and AD844 based CCCII using the Spice Macromodel parameters of AD844. It is seen that the simulation results agree well with the theoretical analysis and the proposed circuit achieves a good THD performance. The resistors used in the circuit are implemented by using MOS transistors. So, the proposed circuit is fully integrable and oscillation frequency can be tuned by external MOS gate voltages. Also, a comparative performance analysis is performed for the two circuits employing CCII and CCCII which are belong to the same topology. It is stated that employing CCCII improve the circuit performance significantly when compared to the same topology employing CCII for both CMOS and AD844 based implementations.
机译:本文提出了一种采用复合第二代电流传输器(CCCII)的新型电压模式可调MOS-C正交正弦振荡器电路。拟议的拓扑使用两个CCCII和四个接地组件。通过使用两个CCII作为子电路来实现CCCII。这种实现技术可以通过可用于电流传输器的商用集成电路(例如AD844)采用该电路。通过PSPICE仿真程序验证了所提出电路的有效性。使用MOSIS 0.35μm工艺参数对基于CMOS的CCCII和使用AD844的Spice Macromodel参数对基于AD844的CCCII进行仿真。可以看出,仿真结果与理论分析吻合良好,所提出的电路具有良好的THD性能。电路中使用的电阻器是通过使用MOS晶体管实现的。因此,所提出的电路是完全可积分的,并且可以通过外部MOS栅极电压来调节振荡频率。而且,对属于相同拓扑的采用CCII和CCCII的两个电路进行了比较性能分析。据指出,与针对基于CMOS和AD844的实现采用CCII的相同拓扑相比,采用CCCII可以显着改善电路性能。

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