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Measurement of D(d,p)T reaction cross sections in Sm metal in low energy region (10 <= E-d <= 20 keV)

机译:在低能区(10 <= E-d <= 20 keV)中的m金属中D(d,p)T反应截面的测量

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摘要

To study the screening effect of nuclear reactions in metallic environments, the thick target yields, the cross sections and the experimental S(E) factors of the D (d,p)T reaction have been measured on deuterons implanted in Sm metal at 133.2 K for beam energies ranging from 10 to 20 keV. The thick target yields of protons emitted in the D(d,p)T reaction are measured and compared with data extrapolated from cross sections and stopping power data at higher energies. The screening potential in Sm metal at 133.2 K is deduced to be 520 +/- 56 eV. As compared with the value achieved in the gas target, the calculated screening potential values are much larger. This screening potential cannot be simply interpreted only by the electron screening. Energy dependences of the cross section sigma(E) and the experimental S(E) factor for D(d,p)T reaction in Sm metal at 133.2 K are obtained, respectively.
机译:为了研究核反应在金属环境中的筛选效果,在133.2 K的条件下,对S金属中注入的氘核测量了厚目标产率,D(d,p)T反应的横截面和实验S(E)因子。光束能量范围为10至20 keV。测量在D(d,p)T反应中发射的质子的厚目标产率,并将其与从横截面推断的数据进行比较,并在较高能量下停止功率数据。 Sm金属在133.2 K处的屏蔽电位被推定为520 +/- 56 eV。与在气体目标中获得的值相比,计算出的筛选潜力值要大得多。不能仅通过电子筛选简单地解释该筛选电位。分别获得了133.2 K下S金属中D(d,p)T反应的截面sigma(E)和实验S(E)因子的能量依赖性。

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