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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Narrow-chirality distributed single-walled carbon nanotube synthesis by remote plasma enhanced ethanol deposition on cobalt incorporated MCM-41 catalyst
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Narrow-chirality distributed single-walled carbon nanotube synthesis by remote plasma enhanced ethanol deposition on cobalt incorporated MCM-41 catalyst

机译:通过掺入钴的MCM-41催化剂上的远程等离子体增强乙醇沉积,窄窄手性分布的单壁碳纳米管合成

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摘要

We demonstrated the synthesis of single-walled carbon nanotubes (SWCNTs) with narrow chiral distribution on cobalt incorporated MCM-41 catalyst using ethanol as carbon feed- stock by remote plasma enhanced chemical vapor deposition. The use of remote plasma enables the decomposition of the nontoxic ethanol to occur away from the site of SWCNT growth. This allows separate manipulation of carbon radical generation and SWCNT growth. A series of syntheses were carried out at plasma power from 0 to 250 W and growth temperature from 625 to 875 °C. Results have revealed that the plasma power and growth temperature affect carbon radical generation and recombination, as well as the reduction and micleation of cobalt species. In addition, the remote ethanol plasma etching does not damage the grown SWCNTs. The chirality of resulting SWCNTs shows minor changes under different plasma power. On the other hand, the diameter of SWCNTs can be adjusted (from 0.7 to 1 nm) by changing the growth temperature. At the optimum condition of 200 W plasma power and 775 °C growth temperature, (7,5) and (8,4) nanotubes account for more than 50% of all semiconducting nanotube species. These results demonstrate the potential of utilizing plasma process in chiral selective growth of SWCNTs.
机译:我们证明了使用乙醇作为碳原料通过远程等离子体增强化学气相沉积法在掺钴的MCM-41催化剂上合成了具有窄手性分布的单壁碳纳米管(SWCNT)。远程血浆的使用使无毒乙醇的分解发生在SWCNT生长部位之外。这样可以分别控制碳自由基的产生和SWCNT的生长。在0至250 W的等离子功率和625至875°C的生长温度下进行了一系列合成。结果表明,等离子体功率和生长温度影响碳自由基的产生和重组,以及钴物种的减少和微粒化。另外,远程乙醇等离子体蚀刻不会损坏生长的SWCNT。所得SWCNT的手性在不同等离子体功率下显示出较小的变化。另一方面,可以通过改变生长温度来调节SWCNT的直径(从0.7至1nm)。在200 W等离子功率和775°C生长温度的最佳条件下,(7,5)和(8,4)纳米管占所有半导体纳米管种类的50%以上。这些结果证明了利用等离子体工艺在SWCNT的手性选择性生长中的潜力。

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