...
首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Interpretation of X-ray photoelectron spectra of carbon-nitride thin films: New insights from in situ XPS
【24h】

Interpretation of X-ray photoelectron spectra of carbon-nitride thin films: New insights from in situ XPS

机译:氮化碳薄膜的X射线光电子能谱解释:原位XPS的新见解

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

We report on angular-resolved x-ray photoelectron spectroscopy (XPS) studies of magnetron sputtered CNx thin films, first in situ (without air exposure), then after air exposure (for time periods ranging from minutes to several years), and finally after Ar ion etching using ion energies ranging from 500 eV to 4 keV. The as-deposited films typically exhibit two strong N1s peaks corresponding to pyridine-like, and graphite-like, at similar to 398.2 eV and similar to 400.7 eV, respectively. Comparison between in situ and air-exposed samples suggests that the peak component at similar to 402-403 eV is due only to quaternary nitrogen and not oxidized nitrogen. Furthermore, peak components in the similar to 399-400 eV range cannot only be ascribed to nitriles or pyrrolic nitrogen as is commonly done. We propose that it can also be due to a polarization shift in pyridinic N, induced by surface water or hydroxides. Argon ion etching readily removes surface oxygen, but results also in a strong preferential sputtering of nitrogen and can cause amorphization of the film surface. The best methods for evaluating and interpreting the CNx film structure and composition with ex-situ XPS are discussed. (C) 2016 Elsevier Ltd. All rights reserved.
机译:我们报告了磁控溅射CNx薄膜的角分辨X射线光电子能谱(XPS)研究,首先是就地(无空气暴露),然后是空气暴露(几分钟到几年的时间),最后是使用范围为500 eV至4 keV的离子能量进行Ar离子蚀刻。所沉积的膜通常在分别类似于398.2 eV和类似于400.7 eV的位置上显示出两个强N1s峰,分别对应于吡啶样和石墨样。原位和空气暴露样品之间的比较表明,类似于402-403 eV的峰组分仅归因于季氮而不是氧化氮。此外,类似于399-400 eV范围内的峰值组分不能像通常那样仅归因于腈或吡咯氮。我们提出,这也可能是由于吡啶吡啶氮的极化移动所致,该极化移动是由地表水或氢氧化物引起的。氩离子蚀刻容易除去表面氧,但是也会导致强烈的优先溅射氮,并且会导致膜表面非晶化。讨论了用异位XPS评估和解释CNx膜结构和成分的最佳方法。 (C)2016 Elsevier Ltd.保留所有权利。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号