'Stress Tests' Probe Nanoscale Strains in Materials: New Results Will Impact the Design of Integrated Circuits

摘要

Researchers at the National Institute of Standards and Technology have demonstrated their ability to measure relatively low levels of stress or strain in regions of a semiconductor device as small as 10 nanometers across. Their recent results not only will impact the design of future generations of integrated circuits but also lay to rest a long-standing disagreement in results between two different methods for measuring stress in semiconductors.