Modulation of the electronic states of 2-D single carrier quantum dots due to presence of hole doped impurity perturbations

摘要

We report the effects of on- and off-center attractive impurities on regular parabolic dots and their impact on the level structures as a function of the strength of the transverse magnetic field. Information entropy, probability density and level-spacing distribution are used as keys to monitor the pattern of evolution of electronic states. The level structures are marked by crossings and anticrossings and sharply peaked level-spacing distribution functions, either at low or high field strengths confirming the presence of level repulsion. The anticipated emergence of quantum chaos as a result of hole doping is demonstrated in dots with off-centre impurities.