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Analyses of plated films by thermal desorption spectrometry (TDS)

机译:通过热脱附光谱法(TDS)分析镀膜

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摘要

Thermal desorption spectrometry (TDS) is an effective method to detect gases that are trapped in films, and it has been used in the semiconductor field. In this paper, there are two main purposes. One is the detection of toxic elements such as lead, which are contained in extremely small quantities in plated films, especially for electroless Ni-P alloy films as bath stabiliser. The other is the detection of gases such as hydrogen, which is a key factor to control film properties, especially for Cu electroplating. Lead has been used for electroless Ni-P films as stabiliser; recently, bismuth has also been used as stabiliser instead of lead from the viewpoint of environment safety and restriction of hazardous substances. The TDS has detected both lead and bismuth contained in electroless Ni-P films, which have been plated from baths containing only 0.1 ppm of Pb and Bi. Copper electroplating has been used to produce printed circuit boards and recently to produce semiconductor wiring. To fill via holes, several kinds of additives, three or more, have been added into the plating bath. The TDS is effective to detect the captured materials because it detects all kinds of mass from 1 to more than 100. Moreover, this method is used for both qualitative and quantitative analyses. In this study, the kinds of additives greatly affected captured materials, kinds and quantity. Three kinds of additives were added in the bath. The film plated from the bath containing only polyethylene glycol with chloride ion showed the lowest hydrogen desorption level; the film plated from the bath containing only bis(3-sulfopropyl)disulfide (SPS) showed the highest level. However, the film plated from the bath that contained only SPS showed the lowest sulphur oxide level. On the other hand, the film plated from the bath containing only Janus green B and the plated bath without additives showed middling levels. The film plated from the bath with all additives showed the highest water desorption level and the lowest hydrogen desorption level, and its contained condition was strongly dependent on the additives.
机译:热解吸光谱法(TDS)是检测膜中捕获的气体的有效方法,并且已在半导体领域中使用。本文有两个主要目的。一种是检测镀膜中极少量的有毒元素,例如铅,尤其是对于化学镀镍-P合金膜作为镀液稳定剂而言。另一个是检测氢气等气体,这是控制薄膜性能的关键因素,尤其是对于铜电镀而言。铅已用于化学镀Ni-P膜中作为稳定剂。最近,从环境安全和有害物质限制的观点出发,铋也被用作稳定剂代替铅。 TDS已检测出化学镀Ni-P膜中所含的铅和铋,这些化学镀Ni-P膜是从仅含0.1 ppm Pb和Bi的镀液中镀出的。电镀铜已用于生产印刷电路板,最近已用于生产半导体布线。为了填充通孔,已将几种或三种以上的添加剂添加到电镀浴中。 TDS可以检测从1到100多种质量的物质,因此可以有效地检测出捕获的物质。此外,此方法可用于定性和定量分析。在这项研究中,添加剂的种类极大地影响了捕获的物质,种类和数量。在浴中添加了三种添加剂。从仅包含具有氯离子的聚乙二醇的浴中镀膜的氢解吸水平最低;从仅含有双(3-磺丙基)二硫化物(SPS)的镀液镀膜显示出最高水平。但是,从仅含SPS的镀液中镀膜的氧化硫含量最低。另一方面,从仅包含Janus绿B的浴中镀覆的膜和不具有添加剂的镀浴显示中等水平。从浴中镀上所有添加剂的薄膜显示出最高的水脱附水平和最低的氢脱附水平,并且其包含条件强烈依赖于添加剂。

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