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Modification of graphene-oxide surface in nitrogen and argon glow discharge plasma

机译:氮气和氩气辉光放电等离子体中氧化石墨烯表面的改性

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摘要

We performed glow discharge N-2 or Ar plasma treatments of thin layers of graphene oxide (GO) deposited from slurry in alcohol onto stainless steel substrates. The treatment was performed in the preparation chamber of the x-ray photoelectron spectrometer, allowing reliable in situ characterization of the treated surface by quantitative x-ray photoelectron spectroscopy. For the treatment, 10min plasma exposure was selected, based on preliminary experiments. Intensity of the treatment was enhanced by applying a negative bias between 0-300V on the sample. Approximately 10at% nitrogen was incorporated into the graphene oxide samples from N-2 plasma within this short reaction time. When increasing the bias, the N-content increased from 10 to 13at%, together with the decrease of the O content from the starting value of 29 to similar to 15at%. The reducing effect of Ar plasma was less pronounced, decreasing the oxygen content to similar to 21at% only. The high resolution C1s, O1s, and N1s spectra show several different chemical states. The peak envelopes of the O1s and N1s lines could be decomposed to three while the C1s spectrum to five different peaks of identical position for all samples. The component peaks were tentatively assigned to specific chemical bonding states. The relative amounts of C-O and C-N bonding states changed slightly with advancement of the treatment performed at increasing biases. It was established that the carboxyl-type and the carbonyl-type C-O clusters were more affected by both plasma treatments as their amount was selectively eliminated. Copyright (c) 2016 John Wiley & Sons, Ltd.
机译:我们对从酒精中的浆料沉积到不锈钢基板上的氧化石墨烯(GO)薄层进行了辉光放电N-2或Ar等离子体处理。该处理是在X射线光电子能谱仪的准备室中进行的,从而可以通过定量X射线光电子能谱对被处理的表面进行可靠的原位表征。对于治疗,根据初步实验选择了10分钟的血浆暴露。通过在样品上施加0-300V之间的负偏压可以增强处理强度。在此较短的反应时间内,将大约10at%的氮掺入N-2等离子体的氧化石墨烯样品中。当增加偏压时,N含量从10at%增加到13at%,同时O含量从29的起始值降低到15at%。 Ar等离子体的还原作用不太明显,将氧含量降低至仅约21at%。高分辨率的C1s,O1s和N1s光谱显示出几种不同的化学状态。对于所有样品,O1s和N1s谱线的峰包络可以分解为三个,而C1s谱图可以分解为相同位置的五个不同峰。暂时将组分峰分配给特定的化学键合状态。 C-O和C-N键合状态的相对量随着以增加的偏压进行的处理的进展而略有变化。已经确定,两种等离子体处理对羧基型和羰基型C-O簇的影响更大,因为它们的量被选择性消除。版权所有(c)2016 John Wiley&Sons,Ltd.

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