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首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >The Storing Matter technique applied to Alq_3: Influence of the collector material and the sputter-deposition energy on fragmentation (Conference Paper)
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The Storing Matter technique applied to Alq_3: Influence of the collector material and the sputter-deposition energy on fragmentation (Conference Paper)

机译:应用于Alq_3的存储物质技术:集电极材料和溅射沉积能对碎片的影响(会议论文)

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摘要

The Storing Matter technique is derived from secondary ion mass spectrometry (SIMS) and consists in decoupling the sputtering of the specimen from the analysis step. In a dedicated prototype instrument, the sample surface is bombarded by an ion beam, and the sputtered particles are deposited at sub-monolayer level onto a collector. In a second step, this deposit is analyzed by SIMS (static or dynamic). In this work, we applied the Storing Matter technique to tris(8-hydroxyquinolinato)aluminum (Alq_3), a common component of organic light-emitting diodes. Alq_3 was sputter-deposited onto Ag and Si collectors with different impact energies ranging from 3.75 keV to 10 keV. Positive mass spectra of these deposits and of an Alq3 reference sample were acquired under static SIMS conditions with 10-keV impact energy. The intensity ratios of the characteristic Alq _3 peaks are very similar for the Alq_3 reference spectrum and the Storing Matter deposit with 10 keV, which indicates that most of the organic fragments deposited on the collector do not undergo a second fragmentation during the analysis step. This is however not the case for the same deposit on a Si collector. As the impact energy used for the sputter-deposition step decreases, the peak distribution is shifted in favor of the smaller fragments, indicating a higher level of fragmentation.
机译:存储物质技术源自二次离子质谱(SIMS),其在于将样品的溅射与分析步骤分离。在专用的原型仪器中,样品表面被离子束轰击,溅射的颗粒以亚单层水平沉积在收集器上。第二步,通过SIMS(静态或动态)分析此沉积物。在这项工作中,我们将存储物质技术应用于有机发光二极管的常见成分三(8-羟基喹啉基)铝(Alq_3)。 Alq_3溅射沉积在Ag和Si集电极上,其冲击能量范围为3.75 keV至10 keV。在静态SIMS条件下,以10keV的冲击能量获得了这些沉积物和Alq3参考样品的正质谱图。对于Alq_3参考光谱和具有10 keV的存储物质沉积,特征性Alq _3峰的强度比非常相似,这表明沉积在收集器上的大多数有机碎片在分析步骤中不会经历第二次破碎。然而,对于在硅集电极上的相同沉积来说不是这种情况。随着用于溅射沉积步骤的冲击能量的降低,峰分布发生偏移,有利于较小的碎片,这表明较高的碎片水平。

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