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Backscattering correction for AES spectra measured at oblique (> 45 degrees) incidence of primary electron beam

机译:在一次电子束倾斜(> 45度)入射下测量的AES光谱的反向散射校正

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摘要

The validity of matrix corrections on an AES analysis for incident angles theta (measured from the surface normal) of >45 degrees was examined. The correction factors to take into account were the atomic density correction factor (N), the electron backscattering correction factor (R) and the inelastic mean free path (lambda). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for theta < 45, which have been reported based on Monte-Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si3N4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors. Copyright (C) 2001 John Wiley & Sons, Ltd. [References: 6]
机译:检验了AES分析中大于45度的入射角θ(从表面法线测量)的矩阵校正的有效性。要考虑的校正因子是原子密度校正因子(N),电子背向散射校正因子(R)和非弹性平均自由程(λ)。根据θ<45°的因子通过外推法估算了大入射角处的反向散射校正因子,该因子已基于蒙特卡洛模拟进行了报道。使用纯金和铜样品检查外推法的有效性,该样品用于根据入射角测量AES强度。然后将本方法应用于大入射角的Si3N4样品的定量分析。已经证实,基于使用灵敏度因子,所提出的矩阵校正方法比常规方法更准确。版权所有(C)2001 John Wiley&Sons,Ltd. [参考:6]

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