Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces

摘要

Spectroscopic ellipsometry can provide information non-destructively on layer thickness, composition, refractive index, crystallinity and surface/interface roughness. This article discusses its use for ex situ/inline monitoring and in situ/real-time control. Examples are given based on silicon epitaxial surfaces, GaN nucleation layers, SiGe/Si and other multilayer structures. Real-time data analysis methods are discussed and in situ spectroscopic ellipsometry is shown to provide insights into surface effects during SiGe epitaxial growth. (C) Crown Copyright 2001. Published by John Wiley & Sons, Ltd. [References: 30]