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Conformal ion implantation

机译:保形离子注入

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Using a 40-50 kV system we have made measurements of how small the sheath can be in plasma implantation with the objective of finding the limits of the process. We have made measurements of sheath size in plasma implantation using the probe technique developed at the University of Wisconsin [M.M. Shamim et al., J. Appl. Phys. 70 (1991)]. We also developed a tritium tracer technique for rapidly measuring the relative implanted dose. The tritium tracer technique is particularly attractive because the amount of tritium required is extremely small (below the activity level which requires regulatory approval) and it can be obtained from a source such as a display tube. In the measurements, we find that implantation with sheaths of distance 1.5-3 cm at voltages of 40-50 kV is similar to operation in other parameter regimes. The only limits occur in the range (100 kV/cm) where vacuum break-down of the substrate is anticipated in any case. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 5]
机译:使用40-50 kV系统,我们已经进行了等离子体注入中护套的尺寸测量,目的是发现过程的极限。我们已经使用威斯康星大学[M.M. Shamim等,J.Appl.Chem。物理70(1991)]。我们还开发了a示踪技术,用于快速测量相对植入剂量。 required示踪技术特别有吸引力,因为所需的of量极少(低于需要监管机构批准的活性水平),并且可以从诸如显像管的来源获得。在测量中,我们发现在40-50 kV的电压下植入距离为1.5-3 cm的护套与在其他参数范围内的操作相似。唯一的限制发生在范围(100 kV / cm)内,在该范围内,无论如何都可以预期基材的真空破坏。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:5]

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