Interface fracture properties of thin films studied by using the micro-cantilever deflection technique

摘要

The mechanical behavior of interfaces between silicon oxide and metallic thin films is investigated using an alternative approach which is based on the miniaturized cantilever deflection technique (Weihs et al., 1988 [1]). The critical energy release rates for three different silicon oxide/metal systems are determined and the results are discussed in this paper. The technique suggested may be applicable with high spatial resolution for a wide variety of structured thin film systems.