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Connections between the correlation potential and the static correlation kernel for two-electron densities in high-density limit

机译:高密度极限下双电子密度相关势与静态相关核之间的联系

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摘要

New approximations with improved shapes of their corresponding potentials are especially needed for high-quality Kohn-Sham calculations. For two-electron densities, a new exact expression for the correlation potential v_c([n]; r) in its high-density scaling limit is derived. Our formula links v_c([n]; r) to an integral of the static correlation kernel f_c([n]; r, r'), f_c([n]; r, r') = #delta#v_c([n]; r)/#delta#n(r'), in the high-density limit. Numerical results, both exact and approximate, for integral integral f_c([n]; r, r')n(r)n(r')dr dr' in the high = density limit for two model two-electron densities, are presented. It is shown that several popular functionals give the wrong sign for the latter.
机译:对于高质量的Kohn-Sham计算,尤其需要具有改进后的势能形状的新近似值。对于两电子密度,推导了相关电势v_c([n]; r)在其高密度缩放限制下的新精确表达式。我们的公式将v_c([n]; r)链接到静态相关核f_c([n]; r,r'),f_c([n]; r,r')=#delta#v_c([n ]; r)/#delta#n(r')(在高密度限制中)。给出了在两个模型双电子密度的高密度极限中积分f_c([n]; r,r')n(r)n(r')dr dr'的精确和近似数值结果。结果表明,几种流行的功能为后者提供了错误的信号。

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