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Titanium atoms dimerization phenomenon and magnetic properties of titanium-antisite (Ti-O) and chromium doped rutile TiO2, ab-initio calculation

机译:钛原子二聚体(Ti-O)和掺铬金红石型TiO2的钛原子二聚现象和磁性能,从头算

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The ab-initio calculations based on the Korringa Kohn Rostoker approximation approach combined with coherent potential approximation (KKR-CPA), were used to study the magnetic properties of the titanium anti-site (Ti-O) and chromium (Cr) doped TiO2. In the considered systems, we used different concentrations for Ti-O defect and Cr doping. In TiO2(0.98)(Ti-O)(0.02), the obtained results indicate that Ti-O is a donor having half-metal behavior. Ti-O[3d] band is located at the Fermi level, although isn't 100% polarized, the ferromagnetic (FM) state is verified as being more stable than disordered local moment (DLM) state. For Ti0.98Cr0.02O2 the Cr doping introduced new states which give the material half-metallic feature. The majority spin of Cr impurities are located at the Fermi level and the conduction electrons around the Fermi level are 100% spin polarized. This indicates the stability of (FM) state. Moreover, in Ti0.98Cr0.02O2(0.98)(Ti-O)(0.02), the top of the valence band is shifted to lower energy compared to pure TiO2, and the n-type of TiO2 is verified. The majority spin of Cr[3d] are located at 0.025 Ry close to the Fermi level. The predicted Curie temperatures (Tc) were calculated using the mean field approximation (MFA) and we predicted that Ti-O defect in Cr doped TiO2 makes Tc higher. This kind of defect makes the material useful for spinotronics's applications and devices. (C) 2016 Elsevier Ltd. All rights reserved.
机译:基于Korringa Kohn Rostoker近似方法和相干势近似(KKR-CPA)的从头计算,用于研究钛反位(Ti-O)和铬(Cr)掺杂的TiO2的磁性。在考虑的系统中,我们对Ti-O缺陷和Cr掺杂使用了不同的浓度。在TiO 2(0.98)(Ti-O)(0.02)中,获得的结果表明Ti-O是具有半金属行为的供体。 Ti-O [3d]谱带位于费米能级,尽管不是100%极化的,但已证明铁磁(FM)状态比无序局部矩(DLM)状态更稳定。对于Ti0.98Cr0.02O2,Cr掺杂引入了新的状态,赋予了材料半金属特征。 Cr杂质的大部分自旋位于费米能级,费米能级附近的传导电子为100%自旋极化。这表明(FM)状态的稳定性。此外,在Ti0.98Cr0.02O2(0.98)(Ti-O)(0.02)中,价带的顶部移动到比纯TiO2更低的能量,并且验证了TiO2的n型。 Cr [3d]的大部分自旋位于接近费米能级的0.025 Ry处。使用平均场近似(MFA)计算了预测的居里温度(Tc),我们预测Cr掺杂的TiO2中的Ti-O缺陷会使Tc更高。这种缺陷使该材料可用于自旋电子学的应用和设备。 (C)2016 Elsevier Ltd.保留所有权利。

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